052-6214 rev b 11-2000 apt20GF120BR g c e maximum ratings all ratings: t c = 25c unless otherwise specified. apt20GF120BR 1200v 32a the fast igbt is a new generation of high voltage power igbts. using non-punch through technology the fast igbt offers superior ruggedness, fast switching speed and low collector-emitter on voltage. ? low forward voltage drop high freq. switching to 20khz low tail current ultra low leakage current avalanche rated rbsoa and scsoa rated to-247 g c e caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com usa 405 s.w. columbia street bend, oregon 97702 -1035 phone: (541) 382-8028 fax: (541) 388-0364 europe chemin de magret f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 min typ max 1200 4.5 5.5 6.5 2.7 3.2 3.3 3.9 0.8 5.0 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.8ma) gate threshold voltage (v ce = v ge , i c = 350a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 15a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges static electrical characteristics unit volts ma na symbol v ces v cgr v ge i c1 i c2 i cm i lm e as p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k ) gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 90c pulsed collector current 1 @ t c = 25c rbsoa clamped inductive load current @ r g = 11 t c = 125c single pulse avalanche energy 2 total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt20GF120BR 1200 1200 20 32 20 64 40 22 200 -55 to 150 300 unit volts amps mj watts c
052-6214 rev b 11-2000 apt20GF120BR symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-emitter charge gate-collector ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy turn-off switching energy total switching losses turn-on delay time rise time turn-off delay time fall time total switching losses forward transconductance test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25 c) v ge = 15v v cc = 0.5v ces i c = i c2 r g = 10 inductive switching (150 c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 t j = +150c inductive switching (25 c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 t j = +25c v ce = 20v, i c = i c2 min typ max 1050 1210 100 150 63 110 95 140 13 20 62 90 15 30 67 130 92 140 93 190 17 34 30 60 105 160 71 140 1.3 3.0 1.5 3.0 2.7 5.0 17 30 35 70 93 140 70 140 2.4 5.0 12 unit pf nc ns ns mj ns mj s unit c/w oz gm lbin nm min typ max 0.63 40 0.22 6.1 10 1.1 characteristic junction to case junction to ambient package weight mounting torque ( using a 6-32 or 3mm binding head machine screw ) symbol r jc r ja w t torque thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 i c = i c2 , r ge = 25 , l = 110h, t j = 25c 3 see mil-std-750 method 3471 apt reserves the right to change, without notice, the specifications and information contained herein.
052-6214 rev b 11-2000 apt20GF120BR c, capacitance (pf) i c , collector current (amperes) i c , collector current (amperes) v ge , gate-to-emitter voltage (volts) i c , collector current (amperes) i c , collector current (amperes) t c =+25c t j =+150c single pulse 250sec. pulse test v ge = 15v i c = i c2 t j = +25c f = 1mhz 9v 11v 9v c ies c res 13v 7v 13v 11v 7v note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.05 d=0.5 0.2 0.02 0.01 single pulse c oes v ge =17 & 15v z jc , thermal impedance ( c/w) v ge =17 & 15v t c =-55 c t c =+25 c t c =+150 c 0.1 operation limited by v ce (sat) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 1, typical output characteristics (t j = 25 c) figure 2, typical output characteristics (t j = 150 c) v ce , collector-to-emitter voltage (volts) v ce , collector-to-emitter voltage (volts) figure 3, typical output characteristics @ v ge = 15v figure 4, maximum forward safe operating area v ce , collector-to-emitter voltage (volts) q g , total gate charge (nc) figure 5, typical capacitance vs collector-to-emitter voltage figure 6, gate charges vs gate-to-emitter voltage rectangular pulse duration (seconds) figure 7, maximum effective transient thermal impedance, junction-to-case vs pulse duration 100s 1ms 10ms 50 40 30 20 10 0 100 50 10 5 1 20 16 12 8 4 0 50 40 30 20 10 0 60 40 30 20 10 0 2,000 1,000 500 100 50 10 1.0 0.5 0.1 0.05 0.01 0.005 0.001 v ce =240v v ce =600v 0 4 8 12 16 20 0 4 8 12 16 20 0 2 4 6 8 1 5 10 50 100 1200 0.01 0.1 1.0 10 50 0 40 80 120 160 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10
052-6214 rev b 11-2000 apt20GF120BR 5.0 4.0 2.0 1.5 1.0 1.2 1.1 1 0.9 0.8 0.7 10 1 0.1 100 10 1 v cc = 0.66 v ces v ge = +15v t j = +25 c i c = i c2 v cc = 0.66 v ces v ge = +15v t j = +125 c r g = 10 v cc = 0.66 v ces v ge = +15v r g = 10 i c1 0.5 i c2 i c2 i c1 e on e off e on e off 0.5 i c2 i c2 t j , junction temperature ( c) t c , case temperature ( c) figure 8, typical v ce (sat) voltage vs junction temperature figure 9, maximum collector current vs case temperature t j , junction temperature ( c) r g , gate resistance (ohms) figure 10, breakdown voltage vs junction temperature figure 11, typical switching energy losses vs gate resistance t j , junction temperature ( c) i c , collector current (amperes) figure 12, typical switching energy losses vs. junction temperature figure 13, typical switching energy losses vs collector curr ent f, frequency (khz) figure 14,typical load current vs frequency -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 0.1 1.0 10 100 1000 40 30 20 10 0 5.0 4.0 3.0 2.0 1.0 0 1.6 1.2 0.8 0.4 0 for both: duty cycle = 50% t j = +125 c t sink = +90 c gate drive as specified power dissapation = 56w i load = i rms of fundamental i c , collector current (amperes) total switching energy losses (mj) bv ces , collector-to-emitter breakdown v ce (sat), collector-to-emitter voltage (normalized) saturation voltage (volts) switching energy losses (mj) switching energy losses (mj) i c , collector current (amperes)
052-6214 rev b 11-2000 apt20GF120BR *driver same type as d.u.t. v cc = 0.66 v ces e ts = e on + e off v ce (on) t d (off) t d (on) t f t r 1 figure 15, switching loss test circuit and waveforms figure 16, resistive switching time test circuit and waveforms 2 v cc r g r l = .5 v ces i c2 10% 90% v ge (on) v ce (off) v ge (off) 2 1 from gate drive circuitry d.u.t. b i c i c 90% 10% 90% 10% 10% 90% e off t f t d (off) t d (on) t r e on i c v clamp 100uh v charge a a b d.u.t. driver* v c a r g v c v c d.u.t. v ce (sat) t=2us t0-247 package outline apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs.
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